Ion Beam Delayering for Today’s More Complex Semiconductors

When:  May 6, 2025 from 13:00 to 14:00 (ET)

DESCRIPTION: Join Denton Vacuum’s Kyle Godin, Ph.D., for a hands-on overview of the capabilities and benefits of using Denton’s Ion Beam Etch (IBE) to delayer today’s most complex semiconductors. This webinar, continuing Denton’s long-time relationship with ASM International, is set for Tuesday, 6 May, at 1:00 PM Eastern.

Conventional delayering methods for failure analysis, quality assurance, and reverse engineering are challenged to scale with modern semiconductors, which are larger, more complex, and incorporate a wider variety of materials than ever before. IBE, as implemented on Denton’s Infinity FA system, overcomes the challenges that conventional failure analysis methods cannot.

Denton’s Ion Beam Etch:

●            provides a uniform etch no matter the material,

●            exposes large areas of interest with nanometer-level accuracy, and

●            stop at the precise layer of interest.

SPEAKER: Kyle Godin, Senior Application Engineer – Denton Vacuum (Photo attached)
Kyle Godin graduated with a B.S. in physics from Rose-Hulman with a specialization in semiconductor devices, an M.S. in microelectronics-photonics from the University of Arkansas, and Ph.D. in interdisciplinary engineering from Stevens Institute of Technology. His research focused on 2D materials and photonics, along with

end-to-end fabrication and characterization of simple devices. He has broad experience in metrology of all different types – optical, electronic, optoelectronic, and scanning probe microscopies. Dr. Godin has worked extensively on the thin-beam application of beam sputtering and ion sources for eight years. He is currently at Denton Vacuum in Moorestown, New Jersey.