ASM Online Member Community

 View Only
  • 1.  Special failure symptom for power semiconductor

    Posted 13 days ago
    Edited by Carrie Hawk 13 days ago
    Usually the EOS pattern for the power semiconductor can be identify due to
    1. Voltage punch through on the guard ring or gate bus for the MOSFET related device,
    2. Current punch through on the active area, or
    3. Avalanche breakdown with several burnt marks and randomly distributed on the die surface,
    4. Or combine above symptoms on the die surface.
    Recently I found a special mark burnt mark on the power diode and as attached photos, it looks over current and caused silicon melt, but the melt pattern was continue running on the die surface and as attached photo. Can someone help to told why to have such kind of failure pattern? 
    Several years ago and found the video from ASM website about "IR Thermography: Running Bug Inside Power MOSFET"

    https://www.youtube.com/watch?v=zQvfqLZvnEE

    Can someone help to explain it for more detail





    ------------------------------
    Tony Chan
    Technical Fellow
    Artesyn Embedded Technologies
    Kowloon
    85295188082
    ------------------------------
    Aeromat 2023 - Registration Now Open


  • 2.  RE: Special failure symptom for power semiconductor

    Posted 11 days ago
    @David Burgess might be a helpful resource. He's an active EDFAS member and content contributor at ASM.​

    ------------------------------
    Carrie Hawk
    ASM International
    Community Engagement Specialist

    440-338-5497
    carrieh@asminternational.org
    ------------------------------

    Aeromat 2023 - Registration Now Open