Usually the EOS pattern for the power semiconductor can be identify due to
1. Voltage punch through on the guard ring or gate bus for the MOSFET related device,
2. Current punch through on the active area, or
3. Avalanche breakdown with several burnt marks and randomly distributed on the die surface,
4. Or combine above symptoms on the die surface.
Recently I found a special mark burnt mark on the power diode and as attached photos, it looks over current and caused silicon melt, but the melt pattern was continue running on the die surface and as attached photo. Can someone help to told why to have such kind of failure pattern?
Several years ago and found the video from ASM website about "
IR Thermography: Running Bug Inside Power MOSFET"
https://www.youtube.com/watch?v=zQvfqLZvnEE
Can someone help to explain it for more detail
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Tony Chan
Technical Fellow
Artesyn Embedded Technologies
Kowloon
85295188082
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